K9F5608U0M-YCB0

K9F5608U0M-YCB0,K9F5608U0M-YIB0 Document Title 32M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 0.1 0.2 Initial issue. Revised real-time map-out algorithm(refer to technical notes) 1. Changed device name i. KM29U256T -> K9F5608U0M-YCB0 ii. KM29U256IT -> K9F5608U0M-YIB0 1. Changed tWP AC Timing - If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise tWP may be minimum 25ns. 2. Changed Sequential Row Read operation - The Sequential Read 1 and 2 operation is allowed only within a block 3. Changed invalid block(s) marking method prior to shipping - The invalid block(s) information is written the 1st or 2nd page of the invalid block(s) with 00h data --->The invalid block(s) status is defined by the 6th byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every invalid block has 00h data at the column address of 517. 4. Added a new card-type package : K9S5608U0M-MCB0 1. Changed Endurance : 1million -> 100K Program/Erase Cycles 1. Changed package name : K9S5608U0M-MCB0 ->K9F5608U0M-MCB0(Micro Flash Card) 2. Changed invalid block(s) marking method prior to shipping - The invalid block(s) status is defined by the 6th byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every invalid block has 00h data at the column address of 517. --->The invalid block(s) status is defined by the 6th byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every invalid block has no...