DatasheetsPDF.com

K9F2G16U0M

Samsung semiconductor
Part Number K9F2G16U0M
Manufacturer Samsung semiconductor
Description FLASH MEMORY
Published Apr 7, 2005
Detailed Description K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Preliminary FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND ...
Datasheet PDF File K9F2G16U0M PDF File

K9F2G16U0M
K9F2G16U0M

Overview
K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Preliminary FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.
0 0.
1 History 1.
Initial issue 1.
Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.
8V device (Page 34) 2.
Add the data protection Vcc guidence for 1.
8V device - below about 1.
1V.
(Page 35) Draft Date Sep.
19.
2001 Nov.
22.
2002 Remark Advance Preliminary 0.
2 The min.
Vcc value 1.
8V devices is changed.
K9F2GXXQ0M : Vcc 1.
65V~1.
95V --> 1.
70V~1.
95V Mar.
6.
2003 Preliminary 0.
3 Few current value is changed.
Before K9F2GXXQ0M Typ.
ISB2 ILI ILO After K9F2GXXQ0M Typ.
ISB2 ILI ILO 10 Max.
50 ±10 ±10 20 Max.
100 ±20 ±20 Apr.
2.
2003 ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)