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K7R161884B

Part Number	K7R161884B
Manufacturer	Samsung semiconductor
Description	512Kx36 & 1Mx18 QDR II b4 SRAM
Published	Apr 7, 2005
Detailed Description	K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision...
Datasheet	K7R161884B PDF File

Overview

K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev.
No.
0.
0 0.
1 History 1.
Initial document.
1.
Change the Boundary scan exit order.
2.
Correct the Overshoot and Undershoot timing diagram.
1.
Change JTAG Block diagram 1.
Add the speed bin (-25) 1.
Correct the JTAG ID register definition 2.
Correct the AC timing parameter (delete the tKHKH Max value) 1.
Change the Maximum Clock cycle time.
2.
Correct the 165FBGA package ball size.
1.
Add the power up/down sequencing comment.
2.
Update the DC current parameter (Icc and Isb).
3.
Change the Max.
speed bin from -33 to -30.
1.
Change the ISB1.
Speed Bin -30 -25 -20 -...

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