K6R4016V1D

K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 0.1 History Initial release with Preliminary. Change Icc. Isb and Isb1 Item ICC(Commercial) 10ns 12ns 15ns 10ns 12ns 15ns Previous 90mA 80mA 70mA 115mA 100mA 85mA 30mA 10mA Current 65mA 55mA 45mA 85mA 75mA 65mA 20mA 5mA Draft Data September. 7. 2001 November, 3. 2001 Remark Preliminary Preliminary ICC(Industrial) ISB ISB1 Rev. 0.2 1. Correct AC parameters : Read & Write Cycle mA 2. Delete Low Ver. 3. Delete Data Retention Characteristics 1. Delete 15ns speed bin. 2. Change Icc for Industrial mode. Item 10ns ICC(Industrial) 12ns November, 3. 2001 Preliminary Rev. 0.3 December, 18. 2001 Previous 85mA 75mA Current 75mA 65mA Preliminary Rev. 1.0 1. Final datasheet release. 2. Delete 12ns speed bin. 3. Delete UB,LB releated AC characteristics and timing diagram. 4. Correct Read Cycle time waveform(2). July, 09, 2002 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 1.0 July 2002 K6R4004C1D 4Mb Async. Fast SRAM Ordering Information Org. 1M...