128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out....
Description
PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1.1. Delete Preliminary Update D.C parameters. 2.1. Update D.C parameters Previous spec. ITEMS (12/15/17/20ns part) ICC 200/190/180/170mA ISB 30mA ISB1 10mA Draft Data Apr. 22th, 1995 Feb. 29th, 1996 Remark Preliminary Final
Rev. 2.0
Jul. 16th, 1996 Updated spec. (12/15/17/20ns part) 170/165/165/160mA 25mA 8mA Jun. 2nd, 1997
Final
Rev. 3.0
Add Industrial Temperature Range parts and 300mil-SOJ PKG. 3.1. Add 32-Pin 300mil-SOJ Package. 3.2. Add Industrial Temperature Range parts with the same parameters as Commercial Temperature Range parts. 3.2.1. Add K6R1008C1A parts for Industrial Temperature Range. 3.2.2. Add ordering information. 3.2.3. Add the condition for operating at Industrial Temp. Range. 3.3. Add the test condition for VOH1 with VCC=5V±5% at 25°C 3.4. Add timing diagram to define tWP as ″(Timing Wave Form of Write Cycle(CS=Controlled)″ 4.1. Delete 17ns Part
Final
Rev. 4.0
Feb. 25th, 1998
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you...
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