K6F3216T6M-F

K6F3216T6M Family Document Title 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 1.0 Draft Date November 4, 2003 Remark Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 November 2002 K6F3216T6M Family FEATURES Process Technology: Full CMOS Organization: 2M x16 Power Supply Voltage: 2.7~3.6V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 55-TBGA-7.50x12.00 CMOS SRAM GENERAL DESCRIPTION The K6F3216T6M families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 2M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM PRODUCT FAMILY Power Dissipation Product Family K6F3216T6M-F Operating Temperature Industrial(-40~85°C) Vcc Range 2.7~3.6V Speed 551)/70ns Standby (ISB1, Max.) 40µA Operating (ICC1, Max) 7mA PKG Type 55-TBGA-7.50x12.00 1. The parameter is measured with 30pF test load. PIN DESCRIPTION 1 2 3 4 5 6 7 8 FUNCTIONAL BLOCK DIAGRAM Clk gen. Prec...