K6E0808C1E-C10

K6E0808C1E-C/E-L, K6E0808C1E-I/E-P Document Title 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. For Cisco CMOS SRAM Revision History Rev .No. Rev. 0.0 Rev. 1.0 Rev. 2.0 History Initial release with Preliminary. Release to Final Data Sheet. 2.1. Add Low Power Version. 2.2. Add data retention charactoristic. Draft Data Aug. 1. 1998 Nov. 2. 1998 Feb. 25. 1999 Remark Preliminary Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Revision 2.0 Feburary 1999 K6E0808C1E-C/E-L, K6E0808C1E-I/E-P 32K x 8 Bit High-Speed CMOS Static RAM FEATURES Fast Access Time 10, 12, 15ns(Max.) Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2mA(Max.) 0.6mA(Max.) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max.) K6E0808C1E-12 : 80mA(Max.) K6E0808C1E-15 : 80mA(Max.) Single 5.0V±10% Power Supply TTL Compatible Inputs and Outputs I/O Compatible with 3.3V Device Fully Static Operation - No Clock or Refresh required Three State Outputs 2V Minimum Data Retention : L-Ver. only Standard Pin Configuration K6E0808C1E-J : 28-SOJ-300 K6E0808C1E-T : 28-TSOP1-0813. 4F For Cisco CMOS ...