K6E0808C1C-C

PRELIMINARY K6E0808C1C-C Document Title 32Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out. CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1. Delete Preliminary Update A.C parameters 2.1. Updated A.C parameters Previous spec. Updated spec. (12/15/20ns part) (12/15/20ns part) tOE - / 8/10ns - / 7 /9 ns tCW - /12/ - ns - /11/ - ns tHZ 8/10/10ns 6/ 7/10ns tOHZ - / 8 / - ns - / 7 / - ns tDW - / 9 / - ns - / 8 / - ns 2.2. Add VOH1=3.95V with the test condition as Vcc=5V±5% at 25°C Items Rev. 3.0 3.1. Add 28-TSOP1 Package. 3.2. Add L-version. 3.3. Add Data Rentention Characteristics. 4.1. Delete DIP Package. 4.2. Delete L-version. 4.3. Delete Data Retention Characteristics and Waveform. Feb. 22th, 1996 Final Draft Data Apr. 1st, 1994 May 14th,1994 Remark Preliminary Final Rev. 2.0 Oct. 4th, 1994 Final Rev. 4.0 Feb. 25th, 1998 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 4.0 February 1998 PRELIMINARY K6E0808C1C-C 32K x 8 Bit High-Speed CMOS Static RAM FEATURES Fast Access Time 12, 15, 20ns(Max.) Low Power Dissipation Standby (TTL) : 4...