K4S643232C

K4S643232C CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 November 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- REV. 1.1 Nov. '99 K4S643232C Revision History Revision 1.1 (November 17th, 1999) Corrected typo in ordering information on page 3 CMOS SDRAM Revision 1.0 (October, 1999) Changed part number from KM432S2030CT-G/F to K4S643232C-TC/TL according to re-organized code system -2- REV. 1.1 Nov. '99 K4S643232C 512K x 32Bit x 4 Banks Synchronous DRAM FEATURES 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle CMOS SDRAM GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applic...