JDV2S07S

JDV2S07S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S07S VCO for UHF Band Radio · · · High Capacitance Ratio : C1V/C4V = 2.3 (typ.) Low Series Resistance : rs = 0.42 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 -55~150 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1K1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs I R = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Test Condition Weight: 0.0011 g (typ.) Min 10 ¾ 4.0 1.85 2.0 ¾ Typ. ¾ ¾ 4.5 2.0 2.3 0.42 Max ¾ 3 4.9 2.35 ¾ 0.55 Unit V nA pF ¾ W Note: Signal level when capacitance is measured: Vsig = 500 mVrms Marking D 1 2002-01-23 JDV2S07S CV – VR 10 f = 1 MHz Ta = 25°C 100 IR – VR 7 (pA) (pF) 10 Ta = 80°C 60 5 Reverse current IR Capacitance CV 3 1 2 0.1 25 1 0 1 2 3 4 5 6 7 8 9 10 0.01 0 4 8 12 16 Reverse voltage VR (V) Reverse voltage VR (V) rs – VR 0.7 0.6 f = 470 MHz 4 f = 1 MHz dC – Ta (%) Ta = 25°C 3 2 1 0 -1 -2 -3 -4 -40 6V 4 VR = 1 V 2 (9) 0.5 0.4 0.3 0.2 0.1 0 0.3 Capacitance change Ratio @C Series resistance rs 0.5 1 2 3 5 10 -20 0 20 40 60 80 Reverse voltage VR (V) Ambient temperature Ta (°C) 2 2002-01-23 JDV2S07S RESTRICTIONS ON PROD...