Document
PD - 90430C
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS
IRFF130
100V
RDS(on) 0.18Ω
ID 8.0A
IRFF130 JANTX2N6796 JANTXV2N6796 REF:MIL-PRF-19500/557 100V, N-CHANNEL
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C
IDM PD @ TC = 25°C
Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂
TJ TSTG
Operating Junction Storage Temperature Range Lead Temperature Weight
Units
8.0 5.0 A
32
25 W
0.20
W/°C
±20 V
75 mJ
—A
— mJ
5.5 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
For footnotes refer to the last page
www.irf.com
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01/22/01
IRFF130
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS ∆BVDSS/∆TJ
RDS(on)
VGS(th) gfs IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
Min 100 —
— — 2.0 3.0 — —
— — 12.8 1.0 3.8 — — — — —
— — —
Ω
Typ Max Units —— V 0.10 — V/°C
— 0.18 — 0.207 Ω — 4.0 V — — S( ) — 25 — 250 µA
— 100 — -100 nA — 28.5 — 6.3 nC — 16.6 — 30 — 75 — 40 n s — 45 7.0 — nH
650 240 — 44 —
pF
Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 5.0A ➃ VGS =10V, ID = 8.0A ➃ VDS = VGS, ID = 250µA VDS > 15V, IDS = 5.0A ➃
VDS= 80V, VGS=0V VDS = 80V
VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V
VGS =10V, ID =8.0A VDS= 50V
VDD = 50V, ID = 8.0A, RG = 7.5Ω
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS ISM VSD trr QRR
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
— — 8.0 — — 32
A
— — 1.5 V
— — 300 nS
— — 3.0 µC
Tj = 25°C, IS =8.0A, VGS = 0V ➃
Tj = 25°C, IF = 8.0A, di/dt ≤ 100A/µs VDD ≤ 50V ➃
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA
Junction-to-Case Junction-to-Ambient
Min Typ Max Units — — 5.0
°C/W — — 175
Test Conditions Typical socket mount.
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2 www.irf.com
IRFF130
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics www.irf.com
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFF130
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1133aa&&bb
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
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Fig 8. Maximum Safe Operating Area www.irf.com
Fig 9. Maximum Drain Current Vs. Case Temperature
IRFF130
VDS VGS RG
RD D.U.T.
10V
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com
5
IRFF130
15V
VDS
L
D R IV E R
RG
2100VV tp
D .U .T IA S
0.01Ω
+ - VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+ D.U.T. -VDS
VGS
3mA
IG ID
Current Sampli.