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JANTXV2N6796 Dataheets PDF



Part Number JANTXV2N6796
Manufacturers International Rectifier
Logo International Rectifier
Description POWER MOSFET N-CHANNEL
Datasheet JANTXV2N6796 DatasheetJANTXV2N6796 Datasheet (PDF)

PD - 90430C REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS IRFF130 100V RDS(on) 0.18Ω ID 8.0A IRFF130 JANTX2N6796 JANTXV2N6796 REF:MIL-PRF-19500/557 100V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconducta.

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PD - 90430C REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS IRFF130 100V RDS(on) 0.18Ω ID 8.0A IRFF130 JANTX2N6796 JANTXV2N6796 REF:MIL-PRF-19500/557 100V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-39 Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight Units 8.0 5.0 A 32 25 W 0.20 W/°C ±20 V 75 mJ —A — mJ 5.5 V/ns -55 to 150 oC 300 (0.063 in. (1.6mm) from case for 10s) 0.98(typical) g For footnotes refer to the last page www.irf.com 1 01/22/01 IRFF130 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) gfs IDSS Parameter Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min 100 — — — 2.0 3.0 — — — — 12.8 1.0 3.8 — — — — — — — — Ω Typ Max Units —— V 0.10 — V/°C — 0.18 — 0.207 Ω — 4.0 V — — S( ) — 25 — 250 µA — 100 — -100 nA — 28.5 — 6.3 nC — 16.6 — 30 — 75 — 40 n s — 45 7.0 — nH 650 240 — 44 — pF Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 5.0A ➃ VGS =10V, ID = 8.0A ➃ VDS = VGS, ID = 250µA VDS > 15V, IDS = 5.0A ➃ VDS= 80V, VGS=0V VDS = 80V VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =10V, ID =8.0A VDS= 50V VDD = 50V, ID = 8.0A, RG = 7.5Ω Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS ISM VSD trr QRR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — 8.0 — — 32 A — — 1.5 V — — 300 nS — — 3.0 µC Tj = 25°C, IS =8.0A, VGS = 0V ➃ Tj = 25°C, IF = 8.0A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — 5.0 °C/W — — 175 Test Conditions Typical socket mount. Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRFF130 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFF130 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1133aa&&bb Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com Fig 9. Maximum Drain Current Vs. Case Temperature IRFF130 VDS VGS RG RD D.U.T. 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % +-V D D Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFF130 15V VDS L D R IV E R RG 2100VV tp D .U .T IA S 0.01Ω + - VDD A Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 10 V QGS VG QG QGD Charge Fig 13a. Basic Gate Charge Waveform 6 Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF + D.U.T. -VDS VGS 3mA IG ID Current Sampli.


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