Document
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39)
Product Summary
Part Number
BVDSS
IRFF120
100V
RDS(on) ID 0.30 6.0A
PD-90426E
IRFF120 JANTX2N6788 JANTXV2N6788
100V, N-CHANNEL
REF: MIL-PRF-19500/555
Description
The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters.
TO-39
Features
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 1B per MIL-STD-750,
Method 1020
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Symbol
Parameter
Value
ID1 @ VGS = 10V, TC = 25°C ID2 @ VGS = 10V, TC = 100°C
IDM @ TC = 25°C PD @ TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Continuous Drain Current
Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Lead Temperature
6.0 3.5 24 20 0.16 ± 20 0.242 2.2 2.0 5.5
-55 to + 150
300 (0.063 in. /1.6 mm from case for 10s)
Weight
0.98 (Typical)
Units
A
W W/°C
V mJ A mJ V/ns
°C
g
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-12-04
IRFF120 JANTX2N6788/JANTXV2N6788
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol BVDSS BVDSS/TJ
RDS(on)
VGS(th) Gfs IDSS
IGSS
QG QGS QGD td(on) tr td(off) tf
Ls +LD
Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Total Inductance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 100 ––– ––– ––– 2.0 1.5 ––– ––– ––– ––– 7.7 0.7 2.0 ––– ––– ––– –––
–––
––– ––– –––
Typ. Max. ––– ––– 0.10 ––– ––– 0.30 ––– 0.35 ––– 4.0 ––– ––– ––– 25 ––– 250 ––– 100 ––– -100 ––– 18 ––– 4.0 ––– 9.0 ––– 40 ––– 70 ––– 40 ––– 70
7.0 –––
350 ––– 150 ––– 24 –––
Units
Test Conditions
V VGS = 0V, ID = 1.0mA V/°C Reference to 25°C, ID = 1.0mA
VGS = 10V, ID2 = 3.5A VGS = 10V, ID1 = 6.0A
V VDS = VGS, ID = 250µA
S VDS = 15V, ID2 = 3.5A
µA
VDS = 80 V, VGS = 0V VDS = 80V,VGS = 0V,TJ =125°C
nA
VGS = 20V VGS = -20V
ID1 = 6.0A
nC VDS = 50V
VGS = 10V
VDD = 35V
ns
ID1 = 6.0A RG = 7.5
VGS = 10V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25
nH in from package) with Source wire
internally bonded from Source pin to Drain
pin
VGS = 0V pF VDS = 25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current (Body Diode) ––– ––– 6.0 A
ISM
Pulsed Source Current (Body Diode)
––– ––– 24
VSD
Diode Forward Voltage
––– ––– 1.8 V TJ = 25°C,IS = 6.0A, VGS = 0V
trr
Reverse Recovery Time
––– ––– 240 ns TJ = 25°C, IF = 6.0A, VDD ≤ 50V
Qrr
Reverse Recovery Charge
––– ––– 2.0 µC di/dt = 100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Symbol
Parameter
RJC
Junction-to-Case
RJA
Junction-to-Ambient (Typical Socket Mount)
Min.
–––
–––
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 25V, starting TJ = 25°C, Peak IL = 2.2A, L = 100µH
ISD 6.0A, di/dt 110A/µs, VDD 100V, TJ 150°C, Suggested RG = 7.5 Ω Pulse width 300 µs; Duty Cycle 2%
Typ.
–––
–––
Max.
6.25
175
Units
°C/W
2
International Rectifier HiRel Products, Inc.
2018-12-04
IRFF120 JANTX2N6788/JANTXV2N6788
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical Capacitanc.