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JANTX2N6788 Dataheets PDF



Part Number JANTX2N6788
Manufacturers International Rectifier
Logo International Rectifier
Description N-Channel Transistor
Datasheet JANTX2N6788 DatasheetJANTX2N6788 Datasheet (PDF)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39) Product Summary Part Number BVDSS IRFF120 100V RDS(on) ID 0.30 6.0A PD-90426E IRFF120 JANTX2N6788 JANTXV2N6788 100V, N-CHANNEL REF: MIL-PRF-19500/555 Description The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined.

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39) Product Summary Part Number BVDSS IRFF120 100V RDS(on) ID 0.30 6.0A PD-90426E IRFF120 JANTX2N6788 JANTXV2N6788 100V, N-CHANNEL REF: MIL-PRF-19500/555 Description The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. TO-39 Features  Repetitive Avalanche Ratings  Dynamic dv/dt Rating  Hermetically Sealed  Simple Drive Requirements  ESD Rating: Class 1B per MIL-STD-750, Method 1020 They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Absolute Maximum Ratings Symbol Parameter Value ID1 @ VGS = 10V, TC = 25°C ID2 @ VGS = 10V, TC = 100°C IDM @ TC = 25°C PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt  Operating Junction and Storage Temperature Range Lead Temperature 6.0 3.5 24 20 0.16 ± 20 0.242 2.2 2.0 5.5 -55 to + 150 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) Units A W W/°C V mJ A mJ V/ns °C g For Footnotes, refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2018-12-04 IRFF120 JANTX2N6788/JANTXV2N6788 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Symbol BVDSS BVDSS/TJ RDS(on) VGS(th) Gfs IDSS IGSS QG QGS QGD td(on) tr td(off) tf Ls +LD Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 100 ––– ––– ––– 2.0 1.5 ––– ––– ––– ––– 7.7 0.7 2.0 ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. ––– ––– 0.10 ––– ––– 0.30 ––– 0.35 ––– 4.0 ––– ––– ––– 25 ––– 250 ––– 100 ––– -100 ––– 18 ––– 4.0 ––– 9.0 ––– 40 ––– 70 ––– 40 ––– 70 7.0 ––– 350 ––– 150 ––– 24 ––– Units Test Conditions V VGS = 0V, ID = 1.0mA V/°C Reference to 25°C, ID = 1.0mA  VGS = 10V, ID2 = 3.5A  VGS = 10V, ID1 = 6.0A  V VDS = VGS, ID = 250µA S VDS = 15V, ID2 = 3.5A  µA VDS = 80 V, VGS = 0V VDS = 80V,VGS = 0V,TJ =125°C nA VGS = 20V VGS = -20V ID1 = 6.0A nC VDS = 50V VGS = 10V VDD = 35V ns ID1 = 6.0A RG = 7.5 VGS = 10V Measured from Drain lead (6mm / 0.25 in from package) to Source lead (6mm/ 0.25 nH in from package) with Source wire internally bonded from Source pin to Drain pin VGS = 0V pF VDS = 25V ƒ = 1.0MHz Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) ––– ––– 6.0 A ISM Pulsed Source Current (Body Diode)  ––– ––– 24 VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C,IS = 6.0A, VGS = 0V trr Reverse Recovery Time ––– ––– 240 ns TJ = 25°C, IF = 6.0A, VDD ≤ 50V Qrr Reverse Recovery Charge ––– ––– 2.0 µC di/dt = 100A/µs  ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Thermal Resistance Symbol Parameter RJC Junction-to-Case RJA Junction-to-Ambient (Typical Socket Mount) Min. ––– ––– Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = 25°C, Peak IL = 2.2A, L = 100µH  ISD  6.0A, di/dt 110A/µs, VDD  100V, TJ  150°C, Suggested RG = 7.5 Ω  Pulse width  300 µs; Duty Cycle  2% Typ. ––– ––– Max. 6.25 175 Units °C/W 2 International Rectifier HiRel Products, Inc. 2018-12-04 IRFF120 JANTX2N6788/JANTXV2N6788 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature Fig 5. Typical Capacitanc.


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