JANS1N4148-1

The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. INCH POUND MIL-PRF-19500/116L 8 June 2001 SUPERSEDING MIL-PRF-19500/116K 28 February 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA, 1N4148UBCC, 1N4148UBCD, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC JANS1N4148-1 (see 6.4). Device types 1N914 and 1N4531 are inactive for new design. This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device. 1.2 Physical dimensions. See figures 1 (similar to DO-35), 2, 3, 4, and 5. 1.3 Maximum ratings. Type V(BR) VRWM Io TA = 25qC mA 75 (1) 125 (2) 200 (3) 200 (3) IFSM tp = 1/120 s A (pk) 1 1 2 2 TSTG Top Z6JX R6JL R6JC V dc 1N914, UR 1N4531, UR 1N4148-1, UR-1 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA, 1N4148UBCC, 1N4148UBCD, 100 100 100 100 V (pk) 75 75 75 75 qC -65 to +200 -65 to +200 -65 to +200 -65 to +200 qC -65 to +175 -65 to +175 -65 to +200 -65 to +200 qC/W 70 70 70 70 qC/W 250 (leaded) 100(UR) qC/W N/A N/A N/A 150 (1) Derate at 0.5 mA...