S525T

S525T Vishay Telefunken N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance D Low noise figure 1 G 13 581 94 9280 D 2 3 12624 S525T Marking: LB Plastic case (SOT 23) 1=Source, 2=Gate , 3=Drain S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate-source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol VDS ID ±IGSM Ptot TCh Tstg Value 20 30 10 200 150 –55 to +150 Unit V mA mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Document Number 85045 Rev. 3, 20-Jan-99 www.vishay.de FaxBack +1-408-970-5600 1 (7) S525T Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate - source breakdown voltage Gate - source leakage current Drain current Gate - source cut-off voltage Test Conditions ID = 10 mA, –VGS = 4 V ±IGS = 10 mA, VDS = 0 ±VGS = 6 V, VDS = 0 VDS = 10 V, VGS = 0 VDS = 10 V, ID = 20 mA Symbol V(BR)DS ±V(BR)GSS ±IGSS IDSS –VGS(OFF) Min 20 7.5 5 Typ Max 12 50 14 2.5 Unit V V nA mA V Electrical A...