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S524C80D81

Samsung semiconductor

1K/2K/4K/8K-bit Serial EEPROM

S524C20D11/20D21/80D41/80D81 1K/2K/4K/8K-bit Serial EEPROM Data Sheet OVERVIEW The S524C20D11/20D21/80D41/80D81 serial ...


Samsung semiconductor

S524C80D81

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S524C20D11/20D21/80D41/80D81 1K/2K/4K/8K-bit Serial EEPROM Data Sheet OVERVIEW The S524C20D11/20D21/80D41/80D81 serial EEPROM has a 1,024/2,048/4,096/8,192-bit (128/256/512/1,024byte) capacity, supporting the standard I2C™-bus serial interface. It is fabricated using Samsung’ s most advanced CMOS technology. One of its major feature is a hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled by the state of the write-protect (WP) pin. Using onepage write mode, you can load up to 16 bytes of data into the EEPROM in a single write operation. Another significant feature of the S524C20D11/20D21/80D41/80D81 is its support for fast mode and standard mode. FEATURES I2C-Bus Interface Two-wire serial interface Automatic word address increment Operating Characteristics Operating voltage — 2.5 V to 5.5 V (write) — 2.2 V to 5.5 V (read) EEPROM 1K/2K/4K/8K-bit (128/256/512/1,024-byte) storage area 16-byte page buffer Typical 3.5 ms write cycle time with auto-erase function Hardware-based write protection for the entire EEPROM (using the WP pin) EEPROM programming voltage generated on chip 1,000,000 erase/write cycles 100 years data retention Operating current — Maximum write current: < 3 mA at 5.5 V — Maximum read current: < 200 µA at 5.5 V — Maximum stand-by current: < 5 µA at 3.3 V Operating temperature range — – 25°C to + 70°C (commercial) — – 40°C to + 85°C (industrial) Operating clock frequencies...




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