S3WB20

SHINDENGEN Bridge Diode Square In-line Package S3WB20 200V 2.3A OUTLINE DIMENSIONS Case : S3WB Unit : mm RATINGS ●　Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO 50Hz sine wave, R-load, On glass-epoxy substrate, Ta=40℃ Average Rectified Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ Peak Surge Forward Current Current Squared Time I2t 1ms≦t＜10ms　Ｔc=25℃ ●　Electrical Characteristics (Tl=25℃) Item Symbol Conditions Forward Voltage VF IF=2A, Pulse measurement, Rating of per diode IR VR=VRM, Pulse measurement, Rating of per diode Reverse Current θjl junction to lead 　 Thermal Resistance θja junction to ambient　 Ratings Unit -40～150 ℃ 150 ℃ 200 V 2.3 A 120 A 60 A2ｓ Ratings Unit Max.1.05 V Max.10 μA Max.5.5 ℃/W Max.26.5 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S3WBx 100 Forward Voltage 10 Forward Current IF [A] Tl=150°C [TYP] Tl=25 °C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] S3WBx 16 Forward Power Dissipation Forward Power Dissipation PF [W] 14 12 10 8 6 4 2 0 SIN 0 1 2 3 4 5 6 7 Average Rectified Forward Current IO [A] Tj= 150 °C Sine wave S3WBx 2.4 Derating Curve Average Rectified Forward Current IO [A] 2 l PCB Glass-epoxy substrate Solering land 5mmφ 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] Sine wave R-lo...