MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-...
MOSPEC
Schottky Barrier Rectifiers
Using the
Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
Ffeatures Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O ESD: 8KV(Min.) Human-Body Model In compliance with EU RoHs 2002/95/EC directives
S30D30 Thru S30D60
SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 30-60 VOLTS
TO-3P
MAXIMUM RATINGS
Characteristic
S30D
Symbol
Unit
30 35 40 45 50 60
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
VRRM VRWM 30 35 40 45 50 60
VR
V
RMS Reverse Voltage
VR(RMS) 21
Average Rectifier Forward Current (Per diode) Total Device (Rated VR),TC=125
IF(AV)
Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz)
IFM
Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz)
IFSM
Operating and Storage Junction Temperature Range
TJ , TSTG
25 28 32 35 15 30 30
300
-65 to +150
42
V A A
A
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward...