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IDT71V256SA

Integrated Device Technology

LOW POWER 3.3V CMOS FAST SRAM 256K

LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) Integrated Device Technology, Inc. IDT71V256SA FEATURES • Ideal for h...


Integrated Device Technology

IDT71V256SA

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Description
LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) Integrated Device Technology, Inc. IDT71V256SA FEATURES Ideal for high-performance processor secondary cache Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options Fast access times: — Commercial: 10/12/15/20ns — Industrial: 15ns Low standby current (maximum): — 2mA full standby Small packages for space-efficient layouts: — 28-pin 300 mil SOJ — 28-pin 300 mil plastic DIP (Commercial only) — 28-pin TSOP Type I Produced with advanced high-performance CMOS technology Inputs and outputs are LVTTL-compatible Single 3.3V(±0.3V) power supply DESCRIPTION The IDT71V256SA is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. The IDT71V256SA has outstanding low power characteristics while at the same time maintaining very high performance. Address access times of as fast as10 ns are ideal for 3.3V secondary cache in 3.3V desktop designs. When power management logic puts the IDT71V256SA in standby mode, its very low power characteristics contribute to extended battery life. By taking CS HIGH, the SRAM will automatically go to a low power standby mode and will remain in standby as long as CS remains HIGH. Furthermore, under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to always be less than 6.6mW and typically will be much smaller. The IDT71V256SA is packaged in 28-pin 300 mil SOJ, 28pin ...




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