LOW POWER 3V CMOS SRAM 1 MEG (64K x 16-BIT)
Integrated Device Technology, Inc.
ADVANCE INFORMATION IDT71L016
FEATURES:...
LOW POWER 3V CMOS SRAM 1 MEG (64K x 16-BIT)
Integrated Device Technology, Inc.
ADVANCE INFORMATION IDT71L016
FEATURES:
64K x 16 Organization Wide Operating Voltage Range: 2.7V to 3.6V Speed Grades: 70ns, 100ns Low Operating Power: 45mA (max) Low Standby Power: 5µA (max) Low-Voltage Data Retention: 1.5V (min) Available in a 44-pin TSOP package
DESCRIPTION:
The IDT71L016 is a 1,048,576-bit very low-power Static RAM organized as 64K x 16. It is fabricated using IDT’s highreliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for low-power memory needs. It uses a 6-
transistor memory cell. All input and output signals of the IDT71L016 are LVTTLcompatible and operation is from a single extended-range 3.3V supply. This extended supply range makes the device ideally suited for unregulated battery-powered applications. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. The IDT71L016 is packaged in a JEDEC standard 44-pin TSOP Type II.
FUNCTIONAL BLOCK DIAGRAM
OE
Output Enable Buffer
A0 - A15
Address Buffers
Row / Column Decoders
I/O 15 Chip Enable Buffer 8 High Byte I/O Buffer 8
CS
I/O 8
WE
Write Enable Buffer
64K x 16 Memory Array
16
Sense Amps and Write Drivers I/O 7 8 Low Byte I/O Buffer 8
I/O 0
BHE
Byte Enable Buffers
BLE
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