Document
EMH9 / UMH9N / IMH9A
Transistors
General purpose (dual digital transistors)
EMH9 / UMH9N / IMH9A
zFeatures 1) Two DTC114Ys chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half.
zExternal dimensions (Unit : mm)
EMH9
0.22
(4) (5) (6) (3) (2)
1.2 1.6
(1)
0.13
Each lead has same dimensions
Abbreviated symbol : H9 ROHM : EMT6
zStructure Epitaxial planar type NPN silicon transistor (Built-in resistor type)
(4)
0.65 1.3 0.65
0.8 1.1 0.95 0.95 1.9 2.9
(3)
UMH9N
0.2
0.5
0.5 0.5 1.0 1.6
0.7 0.9 2.0
(5)
(6)
1.25 2.1
0.15
0.1Min.
The following characteristics apply to both DTr1 and DTr2.
ROHM : UMT6 EIAJ : SC-88
0to0.1
Each lead has same dimensions
Abbreviated symbol : H9
zEquivalent circuit
EMH9 / UMH9N
(3) (2) (1) R1 R2 DTr1 DTr2 R2 R1 (4) (5) R1=10kΩ R2=47kΩ DTr2 R2 R1 (3) (2) R1=10kΩ R2=47kΩ
IMH9A
(6)
(4)
DTr1
0.15
1.6 2.8
0.3to0.6
0to0.1
(6)
(1)
Each lead has same dimensions
ROHM : SMT6 EIAJ : SC-74
Abbreviated symbol : H9
zPackaging specifications
Package Code Taping
T2R 8000 − −
TN 3000 − −
T110 3000 − −
Type EMH9 UMH9N IMH9A
Basic ordering unit (pieces)
(3)
(4) (5) (6) R1 R2
0.3
(5)
(2)
(1)
IMH9A
(1)
(2)
Rev.A
1/3
EMH9 / UMH9N / IMH9A
Transistors
zAbsolute maximum ratings (Ta = 25°C)
Parameter Supply voltage Input voltage Symbol VCC VIN IO
IC (Max.)
Limits 50 40 −6 70 100 150 (TOTAL) 300 (TOTAL)
Unit V V
Output current Power dissipation EMH9,UMH9N IMH9A
mA
Pd Tj Tstg
mW °C °C
∗1 ∗2
Junction temperature Storage temperature
150 −55 to +150
∗ ∗
1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded.
zElectrical characteristics (Ta = 25°C)
Parameter
Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio
Symbol VI (off) VI (on) VO (on) II IO (off) GI
fT
Min. − 1.4 − − − 68
−
Typ. − − 0.1 − − −
250
Max. 0.3 − 0.3 0.88 0.5 −
−
Unit V V mA µA −
MHz
Conditions VCC=5V, IO=100µA VO=0.3V, IO=1mA IO/II=5mA/0.25mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA
VCE=10V, IE= −5mA, f=100MHz
∗
R1 R2/R1
7 3.7
10 4.7
13 5.7
kΩ −
− −
∗ Transition frequency of the device
zElectrical characteristic curves
100 50
VO=0.3V
10m
5m
VCC=5V
1k 500
VO=5V Ta=100°C 25°C −40°C
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI (on) (V)
2m
20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m
DC CURRENT GAIN : GI
1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ
200 100 50 20 10 5 2
Ta=−40°C 25°C 100°C
Ta=100°C 25°C −40°C
2m
5m 10m 20m
50m 100m
1µ 0
0.5
1
1.5
2
2.5
3
1 100µ 200µ 500µ 1m
2m
5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI (off) (V)
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
Fig.2 Output current vs. input voltage (OFF characteristics)
Fig.3 DC current gain vs. output current
Rev.A.