DatasheetsPDF.com

IMH9A Dataheets PDF



Part Number IMH9A
Manufacturers Rohm
Logo Rohm
Description Dual Digital Transistor
Datasheet IMH9A DatasheetIMH9A Datasheet (PDF)

EMH9 / UMH9N / IMH9A Transistors General purpose (dual digital transistors) EMH9 / UMH9N / IMH9A zFeatures 1) Two DTC114Ys chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. zExternal dimensions (Unit : mm) EMH9 0.22 (4) (5) (6) (3) (2) 1.2 1.6 (1) 0.13 Each lead has same dimensions Abbreviated symbol : H9 ROHM : EMT6.

  IMH9A   IMH9A



Document
EMH9 / UMH9N / IMH9A Transistors General purpose (dual digital transistors) EMH9 / UMH9N / IMH9A zFeatures 1) Two DTC114Ys chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. zExternal dimensions (Unit : mm) EMH9 0.22 (4) (5) (6) (3) (2) 1.2 1.6 (1) 0.13 Each lead has same dimensions Abbreviated symbol : H9 ROHM : EMT6 zStructure Epitaxial planar type NPN silicon transistor (Built-in resistor type) (4) 0.65 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 (3) UMH9N 0.2 0.5 0.5 0.5 1.0 1.6 0.7 0.9 2.0 (5) (6) 1.25 2.1 0.15 0.1Min. The following characteristics apply to both DTr1 and DTr2. ROHM : UMT6 EIAJ : SC-88 0to0.1 Each lead has same dimensions Abbreviated symbol : H9 zEquivalent circuit EMH9 / UMH9N (3) (2) (1) R1 R2 DTr1 DTr2 R2 R1 (4) (5) R1=10kΩ R2=47kΩ DTr2 R2 R1 (3) (2) R1=10kΩ R2=47kΩ IMH9A (6) (4) DTr1 0.15 1.6 2.8 0.3to0.6 0to0.1 (6) (1) Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : H9 zPackaging specifications Package Code Taping T2R 8000 − − TN 3000 − − T110 3000 − − Type EMH9 UMH9N IMH9A Basic ordering unit (pieces) (3) (4) (5) (6) R1 R2 0.3 (5) (2) (1) IMH9A (1) (2) Rev.A 1/3 EMH9 / UMH9N / IMH9A Transistors zAbsolute maximum ratings (Ta = 25°C) Parameter Supply voltage Input voltage Symbol VCC VIN IO IC (Max.) Limits 50 40 −6 70 100 150 (TOTAL) 300 (TOTAL) Unit V V Output current Power dissipation EMH9,UMH9N IMH9A mA Pd Tj Tstg mW °C °C ∗1 ∗2 Junction temperature Storage temperature 150 −55 to +150 ∗ ∗ 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. zElectrical characteristics (Ta = 25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI (off) VI (on) VO (on) II IO (off) GI fT Min. − 1.4 − − − 68 − Typ. − − 0.1 − − − 250 Max. 0.3 − 0.3 0.88 0.5 − − Unit V V mA µA − MHz Conditions VCC=5V, IO=100µA VO=0.3V, IO=1mA IO/II=5mA/0.25mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10V, IE= −5mA, f=100MHz ∗ R1 R2/R1 7 3.7 10 4.7 13 5.7 kΩ − − − ∗ Transition frequency of the device zElectrical characteristic curves 100 50 VO=0.3V 10m 5m VCC=5V 1k 500 VO=5V Ta=100°C 25°C −40°C OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) 2m 20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m DC CURRENT GAIN : GI 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 200 100 50 20 10 5 2 Ta=−40°C 25°C 100°C Ta=100°C 25°C −40°C 2m 5m 10m 20m 50m 100m 1µ 0 0.5 1 1.5 2 2.5 3 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) Fig.3 DC current gain vs. output current Rev.A.


IMH8A IMH9A IMIC9531


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)