IMBD4448

IMBD4448 Small Signal Diodes SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ Silicon Epitaxial Planar Diodes Top View .056 (1.43) .052 (1.33) ♦ Fast switching diode in case SOT-23, especially suited for automatic insertion. ♦ This diode is also available in other case styles including: the DO-35 case with the type designation 1N4448, the Mini-MELF case with the type designation LL4448, and the SOD-123 case with the type designation 1N4448W .045 (1.15) .037 (0.95) 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Dimensions in inches and (millimeters) Marking A3 3 Top View 1 2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and ≥ f ≥ 50 Hz Surge Forward Current at t < 1 s and Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 75 100 1501) Unit V V mA VR V RM I0 IFSM Ptot Tj TS 500 3501) 150 –65 to +150 mA mW °C °C Device on fiberglass substrate, see layout 4/98 IMBD4448 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 5 mA at IF = 100 mA Leakage Current at VR = 70 V at VR = 70 V, Tj = 150 °C at VR = 25 V, Tj...