Document
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier
Features
• This device is designed for VHF/UHF amplifier, oscillator and mixer applications. • As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. • Sourced from Process 92. • Source & Drain are interchangeable.
J309 J310
MMBFJ309 MMBFJ310
G
December 2010
GS D
TO-92
SOT-23
S
Mark MMBFJ309 : 6U
D MMBFJ310 : 6T
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDS VGS IGF TJ, Tstg
Drain-Source Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range
25 -25 10 - 55 to +150
V V mA °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation Derate above 25°C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
Max.
J309-J310 *MMBFJ309-310 625 350 5.0 2.8 127 357 556
Units
mW mW/°C °C/W °C/W
© 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
1
www.fairchildsemi.com
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0μA, VDS = 0
IGSS Gate Reverse Current
VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, Ta = 125°C
VGS(off) Gate-Source Cutoff Voltage
VDS = 10V, ID = 1.0nA
309 310
-25
-1.0 -2.0
V
-1.0 nA -1.0 μA
-4.0 V -6.5 V
On Characteristics
IDSS
Zero-Gate Voltage Drain Current*
VDS = 10V, VGS = 0
309 12 310 24
30 mA 60 mA
VGS(f) Gate-Source Forward Voltage Small Signal Characteristics
VDS = 0, IG = 1.0mA
1.0 V
Re(yis) Common-Source Input
VDS = 10V, ID = 10mA, f = 100MHz
Conductance
309 0.7 mmhos
310 0.5 mmhos
Re(yos) Common-Source Output Conductance
VDS = 10V, ID = 10mA, f = 100MHz
0.25
mmhos
Gpg Common-Gate Power Gain
VDS = 10V, ID = 10mA, f = 100MHz
16
dB
Re(yfs) Common-Source Forward
VDS = 10V, ID = 10mA, f = 100MHz
12
mmhos
Transconductance
Re(yig) Common-Gate Input Conductance
VDS = 10V, ID = 10mA, f = 100MHz 12 mmhos
gfs Common-Source Forward Transconductance
VDS = 10V, ID = 10mA, f = 1.0kHz 309 10,000
310 8,000
20,000 μmhos 18,000 μmhos
goss Common-Source Output Conductance
VDS = 10V, ID = 10mA, f = 1.0kHz
150 μmhos
gfg Common-Gate Forward Conductance
VDS = 10V, ID = 10mA, f = 1.0kHz 309
310
13,000 12,000
μmhos μmhos
gog Common-Gate Output
VDS = 10V, ID = 10mA, f = 1.0kHz
Condu.