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J310 Dataheets PDF



Part Number J310
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel RF Amplifier
Datasheet J310 DatasheetJ310 Datasheet (PDF)

J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. • As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. • Sourced from Process 92. • Source & Drain are interchangeable. J309 J310 MMBFJ309 MMBFJ310 G December 2010 GS D TO-92 SOT-23 S Mark MMBFJ309 : 6U D MMBFJ310 : 6T Absolute Maximum Ratings * Ta = .

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J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. • As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. • Sourced from Process 92. • Source & Drain are interchangeable. J309 J310 MMBFJ309 MMBFJ310 G December 2010 GS D TO-92 SOT-23 S Mark MMBFJ309 : 6U D MMBFJ310 : 6T Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VDS VGS IGF TJ, Tstg Drain-Source Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 25 -25 10 - 55 to +150 V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta = 25°C unless otherwise noted Symbol Parameter PD Total Device Dissipation Derate above 25°C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06". Max. J309-J310 *MMBFJ309-310 625 350 5.0 2.8 127 357 556 Units mW mW/°C °C/W °C/W © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 1 www.fairchildsemi.com J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier Electrical Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0μA, VDS = 0 IGSS Gate Reverse Current VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, Ta = 125°C VGS(off) Gate-Source Cutoff Voltage VDS = 10V, ID = 1.0nA 309 310 -25 -1.0 -2.0 V -1.0 nA -1.0 μA -4.0 V -6.5 V On Characteristics IDSS Zero-Gate Voltage Drain Current* VDS = 10V, VGS = 0 309 12 310 24 30 mA 60 mA VGS(f) Gate-Source Forward Voltage Small Signal Characteristics VDS = 0, IG = 1.0mA 1.0 V Re(yis) Common-Source Input VDS = 10V, ID = 10mA, f = 100MHz Conductance 309 0.7 mmhos 310 0.5 mmhos Re(yos) Common-Source Output Conductance VDS = 10V, ID = 10mA, f = 100MHz 0.25 mmhos Gpg Common-Gate Power Gain VDS = 10V, ID = 10mA, f = 100MHz 16 dB Re(yfs) Common-Source Forward VDS = 10V, ID = 10mA, f = 100MHz 12 mmhos Transconductance Re(yig) Common-Gate Input Conductance VDS = 10V, ID = 10mA, f = 100MHz 12 mmhos gfs Common-Source Forward Transconductance VDS = 10V, ID = 10mA, f = 1.0kHz 309 10,000 310 8,000 20,000 μmhos 18,000 μmhos goss Common-Source Output Conductance VDS = 10V, ID = 10mA, f = 1.0kHz 150 μmhos gfg Common-Gate Forward Conductance VDS = 10V, ID = 10mA, f = 1.0kHz 309 310 13,000 12,000 μmhos μmhos gog Common-Gate Output VDS = 10V, ID = 10mA, f = 1.0kHz Condu.


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