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J212 Dataheets PDF



Part Number J212
Manufacturers NXP
Logo NXP
Description N-channel field-effect transistors
Datasheet J212 DatasheetJ212 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors FEATURES • High speed switching • Interchangeability of drain and source connections • High impedance. APPLICATIONS • Analog switches • Choppers, multiplexers and commutators • Audio amplifiers. DESCRIPTION N-channel symmetrical junction field-effect trans.

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DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors FEATURES • High speed switching • Interchangeability of drain and source connections • High impedance. APPLICATIONS • Analog switches • Choppers, multiplexers and commutators • Audio amplifiers. DESCRIPTION N-channel symmetrical junction field-effect transistor in a TO-92 (SOT54) package. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. Marking codes: J210: J210. J211: J211. J212: J212. handbook, halfpage 2 J210; J211; J212 PINNING - TO-92 (SOT54) PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION 1 3 g MAM197 d s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff PARAMETER drain-source voltage gate-source cut-off voltage J210 J211 J212 IDSS drain current J210 J211 J212 Ptot yfs total power dissipation common-source transfer admittance J210 J211 J212 Tamb ≤ 50 °C VGS = 0; VDS = 15 V 4 6 7 12 12 12 mS mS mS VGS = 0; VDS = 15 V 2 7 15 − 15 20 40 400 mA mA mA mW ID = 1 nA; VDS = 15 V −1 −2.5 −4 −3 −4.5 −6 V V V CONDITIONS − MIN. MAX. ±25 UNIT V 1997 Dec 01 2 Philips Semiconductors Product specification N-channel field-effect transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VDGO IG Ptot Tstg Tj Note PARAMETER drain-source voltage gate-source voltage drain-gate voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature Tamb ≤ 50 °C; note 1; see Fig.13 open drain open source CONDITIONS − − − − − −65 − J210; J211; J212 MIN. MAX. ±25 −25 −25 10 400 150 150 V V V UNIT mA mW °C °C 1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. PARAMETER thermal resistance from junction to ambient; note 1 VALUE 250 UNIT K/W 1997 Dec 01 3 Philips Semiconductors Product specification N-channel field-effect transistors STATIC CHARACTERISTICS Tj = 25 °C. SYMBOL V(BR)GSS VGSoff PARAMETER gate-source breakdown voltage gate-source cut-off voltage J210 J211 J212 VGSS IDSS gate-source forward voltage drain current J10 J11 J12 IGSS yfs reverse gate leakage current common-source transfer admittance J210 J211 J212 yos common source output admittance J210 J211 J212 DYNAMIC CHARACTERISTICS Tamb = 25 °C. SYMBOL Cis Cos Crs gis gfs grs gos Vn PARAMETER input capacitance output capacitance feedback capacitance common source input conductance common source transfer conductance common source feedback conductance common source output conductance equivalent input noise voltage CONDITIONS VGS = 0; VDS = 15 V − − − VGS = −15 V; VDS = 0 VGS = 0; VDS = 15 V 4 6 7 IG = 0; VDS = 0 VGS = 0; VDS = 15 V 2 7 15 − CONDITIONS IG = −1 µA; VDS = 0 ID = 1 nA; VDS = 15 V −1 −2.5 −4 − − J210; J211; J212 MIN. MAX. −25 −3 −4.5 −6 1 15 20 40 −100 12 12 12 150 200 200 V V V V V UNIT mA mA mA pA mS mS mS µS µS µS TYP. 2 4 0.8 2 0.8 0.9 70 1.1 7.5 7.5 −8 −90 95 200 5 UNIT pF pF pF pF pF pF µS mS mS mS µS µS µS µS nV/√Hz VDS = 15 V; VGS = −10 V; f = 1 MHz VDS = 15 V; VGS = 0; f = 1 MHz VDS = 15 V; VGS = −10 V; f = 1 MHz VDS = 15 V; VGS = 0; f = 1 MHz VDS = 15 V; VGS = −10 V; f = 1 MHz VDS = 15 V; VGS = 0; f = 1 MHz VDS = 15 V; VGS = 0; f = 100 MHz VDS = 15 V; VGS = 0; f = 450 MHz VDS = 15 V; VGS = 0; f = 100 MHz VDS = 15 V; VGS = 0; f = 450 MHz VDS = 15 V; VGS = 0; f = 100 MHz VDS = 15 V; VGS = 0; f = 450 MHz VDS = 15 V; VGS = 0; f = 100 MHz VDS = 15 V; VGS = 0; f = 450 MHz VDS = 15 V; VGS = 0; f = 1 kHz 1997 Dec 01 4 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212 handbook, halfpage 40 MGM277 handbook, halfpage 12 MGM278 IDSS (mA) 30 yfs (mS) 8 20 4 10 0 0 −2 −4 V −6 GSoff (V) 0 0 −2 −4 V −6 GSoff (V) VDS = 15 V; Tj = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.3 Fig.2 Drain current as a function of gate-source cut-off voltage; typical values. Common-source transfer admittance as a function of gate-source cut-off voltage; typical values. handbook, halfpage 80 MGM279 handbook, halfpage 8 MGM280 gos (µS) 60 ID (mA) 6 VGS = 0 V −200 mV 40 4 −400 mV −600 mV 20 2 −800 mV −1.4 V −1 V −1.2 V 8 10 VDS (V) 0 0 −2 −4 V −6 GSoff (V) 0 0 2 4 6 VDS = 15 V; Tamb = 25 °C. Fig.4 Common-source output conductance as a function of gate-source cut-off voltage; typical values. J210. Tj = 25 °C. Fig.5 Output characteristics; typical values. 1997 Dec 01 5 Philips Semiconductors Product specification N-channel fiel.


J211 J212 J212


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