J111

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES High speed switching Interchangeability of drain and source connections Low RDS on at zero gate voltage PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable. 1 handbook, halfpage 2 3 J111; J112; J113 g MAM042 d s Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA J111 Drain-source voltage Drain current VDS = 15 V; VGS = 0 Total power dissipation up to Tamb = 50 °C Gate-source cut-off voltage VDS = 5 V; ID = 1 µA Drain-source on-state resistance VDS = 0.1 V; VGS = 0 RDS on max. 30 50 100 Ω −VGS off min. max. 3 10 1 5 0.5 3 V V Ptot max. 400 400 400 mW IDSS min. 20 5 2 mA ±VDS max. 40 J112 40 J113 40 V July 1993 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Gate forward current (DC) Total power dissipation up to Tamb = 50 °C Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambie...