N-Channel Switch
J108/J109/J110/MMBFJ108
J108/J109/J110/MMBFJ108
N-Channel Switch
• This device is designed for digital switching appli...
Description
J108/J109/J110/MMBFJ108
J108/J109/J110/MMBFJ108
N-Channel Switch
This device is designed for digital switching applications where very low on resistance is mandatory.
Sourced from Process 58.
3
1 TO-92 1. Drain 2. Source 3. Gate
2
1 SuperSOT-3 Marking: I8
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
Parameter
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
TJ, Tstg
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value 25 -25 10
-55 ~ +150
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units V V mA °C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GSS IGSS
VGS(off)
Gate-Source Breakdwon Voltage Gate Reverse Current
Gate-Source Cutoff Voltage
IG = -10µA, VDS = 0
VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, TA = 100°C
VDS = 15V, ID = 10nA
108 109
110
On Characteristics
IDSS
Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0
108 109 110
rDS(on)
Drain-Source On Resistance
VDS ≤ 0.1V, VGS = 0
108 109 110
Small Signal Characteristics
Cdg(on) Csg(off)
Drain Gate & Source Gate On Capacitance
Cdg(on)
Drain-Gate Off Capacitance
Cs...
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