J108

DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs FEATURES High speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (<8 Ω for J108). APPLICATIONS Analog switches Choppers and commutators. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSoff PARAMETER drain-source voltage gate-source cut-off voltage J108 J109 J110 IDSS drain current J108 J109 J110 Ptot total power dissipation up to Tamb = 50 °C VGS = 0; VDS = 5 V ID = 1 µA; VDS = 5 V CONDITIONS handbook, halfpage 2 J108; J109; J110 PINNING - TO-92 PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION 1 3 g MAM197 d s Fig.1 Simplified outline and symbol. MIN. − −3 −2 −0.5 80 40 10 − MAX. ±25 −10 −6 −4 − − − 400 UNIT V V V V mA mA mA mW 1996 Jul 30 2 Philips Semiconductors Product specification N-channel silicon junction FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VGDO IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage gate-drain voltage forward ...