DISCRETE SEMICONDUCTORS
DATA SHEET
J108; J109; J110 N-channel silicon junction FETs
Product specification Supersedes da...
DISCRETE SEMICONDUCTORS
DATA SHEET
J108; J109; J110 N-channel silicon junction FETs
Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30
Philips Semiconductors
Product specification
N-channel silicon junction FETs
FEATURES High speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (<8 Ω for J108). APPLICATIONS Analog switches Choppers and commutators. DESCRIPTION N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSoff PARAMETER drain-source voltage gate-source cut-off voltage J108 J109 J110 IDSS drain current J108 J109 J110 Ptot total power dissipation up to Tamb = 50 °C VGS = 0; VDS = 5 V ID = 1 µA; VDS = 5 V CONDITIONS
handbook, halfpage 2
J108; J109; J110
PINNING - TO-92 PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION
1
3 g
MAM197
d s
Fig.1 Simplified outline and symbol.
MIN. − −3 −2 −0.5 80 40 10 −
MAX. ±25 −10 −6 −4 − − − 400
UNIT V V V V mA mA mA mW
1996 Jul 30
2
Philips Semiconductors
Product specification
N-channel silicon junction FETs
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VGDO IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage gate-drain voltage forward ...