Document
J105/106/107
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
J105 J106 J107
VGS(off) (V)
–4.5 to –10 –2 to –6 –0.5 to –4.5
rDS(on) Max (W)
3 6 8
ID(off) Typ (pA)
10 10 10
tON Typ (ns)
14 14 14
FEATURES
D D D D D Low On-Resistance: J105 < 3 W Fast Switching—tON: 14 ns Low Leakage: 10 pA Low Capacitance: 20 pF Low Insertion Loss
BENEFITS
D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible “Off-Error,” Excellent Accuracy Good Frequency Response Eliminates Additional Buffering
APPLICATIONS
D D D D D Analog Switches Choppers Sample-and-Hold Normally “On” Switches Current Limiters
DESCRIPTION
The J105/106/107 are high-performance JFET analog switches designed to offer low on-resistance and fast switching. rDS(on) <3 W is guaranteed for the J105 making this device the lowest of any commercially available JFET. The low cost TO-226AA (TO-92) plastic package is available in a wide range of tape-and-reel options (see Packaging Information). For similar products in TO-206AC (TO-52) packaging, see the U290/291 data sheet.
TO-226AA (TO-92)
D
1
S
2
G
3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Document Number: 70230 S-04028—Rev. D, 04-Jun-01 Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C www.vishay.com
7-1
J105/106/107
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J105 J106 J107
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentb
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS(F)
IG = –1 mA , VDS = 0 V VDS = 5 V, ID = 1 mA VDS = 15 V, VGS = 0 V VGS = –15 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 25 mA VDS = 5 V, VGS = –10 V
–35
–25 –4.5 500 –10
–25 –2 200 –3 –3 –6
–25 V –0.5 100 –3 –4.5 mA
–0.02 –10 –0.01 0.01 5
nA 3 3 3
Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage
TA = 125_C VGS = 0 V, ID = 1 mA IG = 1 mA , VDS = 0 V
3 0.7
6
8
W V
Dynamic
Common-Source Forward Transconductanceb Common-Source Output Conductanceb Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos rds(on) Ciss Crss en VDS = 10 V, ID = 25 mA f = 1 kHz 55 mS 5 3 120 20 3 160 35 6 160 35 8 160 pF 35 nV⁄ √Hz W
VGS = 0 V, ID = 0 mA f = 1 kHz VDS = 0 V, VGS = 0 V f = 1 MHz VDS = 0 V, VGS = –10 V f = 1 MHz VDG = 10 V, ID = 25 m.