IXTT11P50

Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTH11P50 IXTT11P50 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings - 500 V - 500 V ±20 V ±30 V - 11 A - 44 A - 11 A 1 J 300 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 4 g 6 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA BVDSS Temperature Coefficient VGS(th) VDS = VGS, ID = - 250μA VGS(th) Temperature Coefficient IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = - 5.5A, Note 1 RDS(on) Temperature Coefficient Characteristic Values Min. Typ. Max. - 500 V 0.09 %/K - 3.0 - 5.0 V - 0.25 %/K ±100 nA - 200 μA -1 mA 750 mΩ 0.92 %/K V= DSS ID25 = ≤ RDS(on) - 500V - 11A 750mΩ TO-268 (IXTT) G S D (Tab) TO-247 (IXTH) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features z International Standard Packages z Low RDS (on) HDMOSTM Process z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Low Package Inductance - Easy to Drive and to Protect Advantages z Easy to Mount z Space Savings z High Power Density © 2013 IXYS CORPO...