Document
Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
VDSS
ID25
RDS(on)
IXTH/IXTT 10P50 IXTH/IXTT 11P50
-500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings -500 -500 ± 20 ± 30 10P50 11P50 10P50 11P50 10P50 11P50 -10 -11 -40 -44 -10 -11 30 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ W °C °C °C °C
TO-247 AD (IXTH)
D
(TAB)
TO-268 (IXTT) Case Style
G S G = Gate S = Source D
(TAB)
D = Drain TAB = Drain
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 (TO-247)
300
1.13/10 Nm/lb.in. 6 4 g g
Features
z z z z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. -500 0.054 -3.0 -0.122 ± 100 TJ = 25 ° C TJ = 125 ° C -200 -1 -5.0 V %/K V %/K nA µA mA
z
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
VDSS VGS(th) IGSS IDSS RDS(on)
V GS = 0 V, ID = -250 µA BVDSS Temperature Coefficient V DS = VGS, ID = -250 µA VGS(th) Temperature Coefficient V GS = ±20 VDC, VDS = 0 V DS = 0.8 • VDSS V GS = 0 V V GS = -10 V, ID = 0.5 • ID25
Advantages
z z z
Easy to mount Space savings High power density
10P50 11P50 RDS(on) Temperature Coefficient
0.90 Ω 0.75 Ω 0.6 %/K
94535F (7/02)
© 2002 IXYS All rights reserved
IXTH/IXTT 10P50 IXTH/IXTT 11P50
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5 9 4700 V GS = 0 V, VDS = -25 V, f = 1 MHz 430 135 33 V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 4.7 Ω (External) 27 35 35 160 V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 46 92 0.42 (TO-247) 0.25 S
1 2 3
TO-247 AD Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
V DS = -10 V; ID = ID25, pulse test
pF pF pF ns ns ns ns nC nC nC K/W K/W
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
Dim.
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions V GS = 0
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 10P50 11P50 10P50 11P50 -10 -11 -40 -44 -3 500 A A A A V ns
TO-268 Outline
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = IS, di/dt = 100 A/µs
Terminals: 1 - Gate 3 - Source
2 - Drain Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
.