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IXTH10P50 Dataheets PDF



Part Number IXTH10P50
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description P-Channel MOSFET
Datasheet IXTH10P50 DatasheetIXTH10P50 Datasheet (PDF)

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) IXTH/IXTT 10P50 IXTH/IXTT 11P50 -500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum Ratings -500 -500 ± 20 ± 30 10P50 11P50 10P50 11P50 10P50 11P50 -10 -11 -40 -44 -10 -11 30 300.

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Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) IXTH/IXTT 10P50 IXTH/IXTT 11P50 -500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum Ratings -500 -500 ± 20 ± 30 10P50 11P50 10P50 11P50 10P50 11P50 -10 -11 -40 -44 -10 -11 30 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ W °C °C °C °C TO-247 AD (IXTH) D (TAB) TO-268 (IXTT) Case Style G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 (TO-247) 300 1.13/10 Nm/lb.in. 6 4 g g Features z z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. -500 0.054 -3.0 -0.122 ± 100 TJ = 25 ° C TJ = 125 ° C -200 -1 -5.0 V %/K V %/K nA µA mA z International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = -250 µA BVDSS Temperature Coefficient V DS = VGS, ID = -250 µA VGS(th) Temperature Coefficient V GS = ±20 VDC, VDS = 0 V DS = 0.8 • VDSS V GS = 0 V V GS = -10 V, ID = 0.5 • ID25 Advantages z z z Easy to mount Space savings High power density 10P50 11P50 RDS(on) Temperature Coefficient 0.90 Ω 0.75 Ω 0.6 %/K 94535F (7/02) © 2002 IXYS All rights reserved IXTH/IXTT 10P50 IXTH/IXTT 11P50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5 9 4700 V GS = 0 V, VDS = -25 V, f = 1 MHz 430 135 33 V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 4.7 Ω (External) 27 35 35 160 V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 46 92 0.42 (TO-247) 0.25 S 1 2 3 TO-247 AD Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS V DS = -10 V; ID = ID25, pulse test pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions V GS = 0 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 10P50 11P50 10P50 11P50 -10 -11 -40 -44 -3 500 A A A A V ns TO-268 Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = IS, di/dt = 100 A/µs Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 .


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