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IXSK35N120BD1

IXYS Corporation
Part Number IXSK35N120BD1
Manufacturer IXYS Corporation
Description HIGH VOLTAGE IGBT WITH DIODE
Published Apr 5, 2005
Detailed Description High Voltage IGBT with Diode Short Circuit SOA Capability Preliminary data sheet Symbol VCES VCGR VGES VGEM I C25 I C90 ...
Datasheet PDF File IXSK35N120BD1 PDF File

IXSK35N120BD1
IXSK35N120BD1

Overview
High Voltage IGBT with Diode Short Circuit SOA Capability Preliminary data sheet Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL Weight 1.
6 mm (0.
063 in) from case for 10 s TO-264 PLUS247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 5 W Clamped inductive load VGE = 15 V, VCE = 720 V, TJ = 125°C RG = 5 W, non repetitive TC = 25°C IGBT Diode IXSK 35N120BD1 IXSX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE(SAT) = 3.
6 V Maximum Ratings 1200 1200 ± 20 ± 30 70 35 140 ICM = 90 @ 0.
8 VCES 10 300 190 -55 .
.
.
+150 150 -55 .
.
.
+150 300 10 6 V V V V A A A A ms W ...


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