Document
IGBT
IXSH 35N120B IXST 35N120B
"S" Series - Improved SCSOA Capability
IC25 = 70 A VCES = 1200 V VCE(sat) = 3.6 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 5 Ω Clamped inductive load
Maximum Ratings 1200 1200 ± 20 ± 30 70 35 140 ICM = 90 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A µs W °C °C °C °C g g
TO-247 AD (IXSH)
(TAB)
G C E
TO-268 ( IXST)
G E
(TAB) C = Collector TAB = Collector
TJ = 125°C, VCE = 720 V; VGE = 15 V, RG = 22 Ω TC = 25°C
G = Gate E = Emitter
Features
l
Mounting torque
(TO-247)
1.13/10 Nm/lb.in. 300
l
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268
Epitaxial Silicon drift region - fast switching - small tail current MOS gate turn-on for drive simplicity
6 4
Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 3 TJ = 25°C TJ = 125°C 6 50 2.5 ±100 TJ = 25°C TJ = 125°C 3.6 2.9 V V µA mA nA V V
• AC motor speed control • DC servo and robot drives • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode
power supplies
• DC choppers
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 1.0 mA, VGE = 0 V = 250 µA, VCE = VGE
VCE = 0.8 VCES Note 1 VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Note 2
© 2002 IXYS All rights reserved
98669B (01/02)
IXSH 35N120B IXST 35N120B
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 16 23 3600 VCE = 25 V, VGE = 0 V, f = 1 MHz 260 75 120 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 33 49 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V RG = 5 Ω VCE = 0.8 VCES Note 3 Inductive load, TJ = 125°C IC = IC90, VGE = 15 V RG = 5 Ω, VCE = 0.8 VCES Note 3 36 27 160 180 5 38 29 2.5 240 340 9 300 300 S pF pF pF nC nC nC ns ns ns ns
1 = Gate 2 = Collector 3 = Emitter Tab = Collector
TO-247 AD Outline (IXSH)
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Note 2
9 mJ ns ns mJ ns ns mJ 0.42 K/W TO-268 Outline (IXST)
(TO-247)
0.25
K/W
Notes: 1.
Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG.
2. 3.
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
.