IXSH24N60U1

HiPerFASTTM IGBT with Diode Short Circuit SOA Capability IXSH 24N60U1 IXSH 24N60AU1 VCES 600 V 600 V IC25 VCE(sat) 48 A 2.2 V 48 A 2.7 V Symbol V CES V CGR V GES V GEM I C25 I C90 ICM SSOA (RBSOA) t SC (SCSOA) PC TJ TJM T stg Test Conditions T J = 25 ° C to 150 ° C600 T J = 25 ° C to 150 ° C; R GE = 1 M W Continuous Transient TC = 25 ° C TC = 90 ° C TC = 25 ° C, 1 ms V GE= 15 V, T VJ = 125 ° C, R G = 10 W Clamped inductive load, L = 100 m H V GE= 15 V, V CE = 360 V, T J = 125 ° C, R G = 82 W , non-repetitive TC = 25 ° C Maximum Ratings V 600 ± 20 ± 30 48 24 96 I CM = 48 @ 0.8 V CES 10 150 -55 ... +150 150 -55 ... +150 300 260 TO-247 AD V V V A A A A Features ms W °C °C °C °C °C International standard package JEDEC TO-247 AD High frequency IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies C (TAB) G E G = Gate, E = Emitter, C C = Collector, TAB = Collector Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque, TO-247 TO-247 AD 1.13/10 Nm/lb.in. 6 g Symbol Test Conditions Characteristic Values (TJ = 25°C, u...