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IXGT32N60BD1 Dataheets PDF



Part Number IXGT32N60BD1
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description HiPerFAST IGBTwith Diode
Datasheet IXGT32N60BD1 DatasheetIXGT32N60BD1 Datasheet (PDF)

HiPerFASTTM IGBT with Diode IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V.

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