IXGH25N120A

VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25 °C Maximum Ratings 1200 1200 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C TO-247 AD G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Mounting torque (M3) 1.13/10 Nm/lb.in. 6 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Features International standard package JEDEC TO-247 AD 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity l l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25°C TJ = 125°C 6 250 1 ±100 25N120 25N120A 3 4 V V µA mA nA V V BVCES VGE(th) ICES I GES VCE(sat) IC IC = 3 mA, VGE = 0 V = 250 µA, VCE = VGE VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Capacitor discharge systems Solid state relays l l l l l l l l l Advantages Easy to mount ...