IXFX90N20Q

HiPerFETTM Power MOSFETs Q-CLASS IXFX 90N20Q IXFK 90N20Q Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low t rr V = DSS ID25 = = RDS(on) 200 V 90 A 22 mΩ trr ≤ 200 µs PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ T JM Tstg TL Md Weight Symbol V DSS V GS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V DSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Maximum Ratings 200 V 200 V ±20 V ±30 V 90 A 360 A 90 A 60 mJ 2.5 J 5 V/ns 500 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 0.4/6 Nm/lb.in. 6 g 10 g Test Conditions V = 0 V, I = 250uA GS D V = V , I = 4mA DS GS D VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 V 2.0 4.0 V ±100 nA TJ = 125°C 100 µA 2 mA 22 mΩ G D TO-264 AA (IXFK) (TAB) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) rated Molding epoxies meet UL 94...