IXFT20N80Q

Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFH20N80Q VDSS = 800 V IXFK20N80Q ID25 = 20 A IXFT20N80Q RDS(on) = 0.42 W trr £ 250 ns Maximum Ratings 800 800 ±20 ±30 20 80 20 45 1.5 5 360 -55 ... +150 150 -55 ... +150 300 TO-247 TO-264 1.13/10 0.9/6 6 4 10 V V V V A A A mJ J V/ns TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S TO-264 AA (IXFK) W °C °C °C °C Nm/lb.in. Nm/lb.in. g g g G = Gate S = Source G D S D (TAB) TAB = Drain Features Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±200 TJ = 25°C TJ = 125°C 25 1 0.42 V V nA mA mA W IXYS advanced low Qg process International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on) low Qg Avalanche energy and current rated Fast intrinsic rectifier Advantages Easy to mount Space savings High power density VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ...