IXFR120N20

Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ISOPLUS247TM ID25 = 105 (Electrically Isolated Back Surface) Single MOSFET Die RDS(on) = V A 17 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 200 200 ±20 ±30 105 76 480 120 60 3 5 400 -55 ... +150 150 -55 ... +150 V V V V ISOPLUS 247TM E153432 G A A A A mJ J V/ns D Isolated back surface* D = Drain G = Gate S = Source * Patent pending Features W °C °C °C °C V~ g Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<25pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 17 mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, I...