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IXFN180N10

ETC
Part Number IXFN180N10
Manufacturer ETC
Description HiPerFET Power MOSFET Single MOSFET Die
Published Apr 5, 2005
Detailed Description HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet IXFN 180N10 VDSS ID25 RDS(on) = 100 V = 180 A = 8 mΩ...
Datasheet PDF File IXFN180N10 PDF File

IXFN180N10
IXFN180N10

Overview
HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet IXFN 180N10 VDSS ID25 RDS(on) = 100 V = 180 A = 8 mΩ trr ≤ 250 ns Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.
6 mm (0.
063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Terminal (current limit) T C = 25 °C; Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 100 100 ± 20 ± 30 180 100 720 180 60 3 5 600 -55 .
.
.
+150 150 -55 .
.
.
+150 300 2500 3000 V V V V A A A A mJ J V/ns W °C °C °C °C V~ ...


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