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IXFN120N20

ETC
Part Number IXFN120N20
Manufacturer ETC
Description HiPer FET Power MOSFETs
Published Apr 5, 2005
Detailed Description HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary d...
Datasheet PDF File IXFN120N20 PDF File

IXFN120N20
IXFN120N20

Overview
HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.
6 mm (0.
063 in.
) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C IXFN 120N20 VDSS ID25 RDS(on) = 200 V = 120 A = 17 mW trr £ 250 ns Maximum Ratings 200 200 ±20 ±30 120 480 120 64 3 5 600 -55 .
.
.
+150 150 -55 .
.
.
+150 2500 300...


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