IXFM10N90

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V 900 V ID25 10 A 12 A 13 A RDS(on) 1.1 W 0.9 W 0.8 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 10N90 12N90 13N90 10N90 12N90 13N90 10N90 12N90 13N90 Maximum Ratings 900 900 ±20 ±30 10 12 13 40 48 13 10 12 13 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A A A A mJ V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-204 AA (IXFM) EAR dv/dt PD TJ TJM Tstg TL Md Weight Symbol TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C D G = Gate, S = Source, D = Drain, TAB = Drain G 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier l l l l l l Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.0 V V nA mA mA W W W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 TJ = 25°C TJ = 125°C 4.5 ±100 25 1 1.1 0.9 0.8 Appl...