Power MOSFET
HiPerFETTM Power MOSFETs
Q-CLASS
IXFX 90N20Q IXFK 90N20Q
Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated...
Description
HiPerFETTM Power MOSFETs
Q-CLASS
IXFX 90N20Q IXFK 90N20Q
Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low t
rr
V
=
DSS
ID25
=
= RDS(on)
200 V 90 A 22 mΩ
trr ≤ 200 µs
PLUS 247TM (IXFX)
Symbol
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ T
JM
Tstg TL Md Weight
Symbol
V DSS
V GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C
TC = 25°C TC = 25°C
I S
≤
I,
DM
di/dt
≤
100
A/µs,
V DD
≤
V DSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247 TO-264
Maximum Ratings
200
V
200
V
±20
V
±30
V
90
A
360
A
90
A
60
mJ
2.5
J
5 V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.4/6 Nm/lb.in.
6
g
10
g
Test Conditions
V = 0 V, I = 250uA
GS
D
V = V , I = 4mA
DS
GS D
VGS = ±20 V, VDS = 0
VDS = VDSS VGS = 0 V
VGS = 10 V, ID = 0.5 ID25 Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
200
V
2.0
4.0 V
±100 nA
TJ = 125°C
100 µA 2 mA
22 mΩ
G D
TO-264 AA (IXFK)
(TAB)
G D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features IXYS advanced low Qg process Low gate charge and capacitances
- easier to drive - faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) rated Molding epoxies meet UL 94...
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