IXFK100N10

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW 100 V 100 A 100 V 150 A trr £ 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 ID120 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 120°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings IXFK IXFN 100 100 ±20 ±30 100  76 560 75 30 5 500 100 100 ±20 ±30 150 560 75 30 5 520 150 -55 ... +150 V V V V A A A A mJ V/ns W °C °C °C °C V~ V~ G S S S D D G G D S (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source -55 ... +150 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s 300 0.9/6 10 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Features International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier q q q q q q q q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless othe...