Power MOSFET
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family Obsolete:
IXFM10N100
IXFM12N...
Description
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family Obsolete:
IXFM10N100
IXFM12N100
Symbol
Test Conditions
IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 IXFH 13 N100
V DSS
IR
D25
DS(on)
1000 V 10 A 1.20 W
1000 V 12 A 1.05 W
1000 V 12.5 A 0.90 W
trr £ 250 ns
Maximum Ratings TO-247 AD (IXFH)
V DSS
VDGR VGS VGSM ID25
I
DM
IAR
EAR dv/dt
PD TJ TJM T
stg
TL Md Weight
T J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous Transient
TC = 25°C
T C
=
25°C,
pulse
width
limited
by
T JM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
T J
£
150°C,
R G
=
2
W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque
1000
V
1000
V
±20
V
±30
V
10N100
10
12N100
12
13N100 12.5
10N100
40
12N100
48
13N100
50
10N100
10
12N100
12
13N100 12.5
30
A
A
A A TO-204 AA (IXFM)
A Package
A A
unavailable
A
A
mJ
G D
5 V/ns G = Gate, S = Source,
D = Drain, TAB = Drain
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Features q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS)
rated q Low package inductance
- easy to drive and to protect q Fast intrinsic Rectifier
Symbol
V DSS
VGS(th) IGSS IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
V = 0 V, I = 3 mA
GS
D
VDS = VGS,...
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