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IXDD404 Dataheets PDF



Part Number IXDD404
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description 4 Amp Dual Low-Side Ultrafast MOSFET Driver
Datasheet IXDD404 DatasheetIXDD404 Datasheet (PDF)

IXDD404 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 35V • Ability to Disable Output under Faults • High Capacitive Load Drive Capability: 1800pF in <15ns • Matched Rise And Fall Times • Low Propagation Delay Time • Low Output Impedance • Low Supply Current • Two identical drivers in single chip Applications • Driving .

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IXDD404 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 35V • Ability to Disable Output under Faults • High Capacitive Load Drive Capability: 1800pF in <15ns • Matched Rise And Fall Times • Low Propagation Delay Time • Low Output Impedance • Low Supply Current • Two identical drivers in single chip Applications • Driving MOSFETs and IGBTs • Limiting di/dt under Short Circuit • Motor Controls • Line Drivers • Pulse Generators • Local Power ON/OFF Switch • Switch Mode Power Supplies (SMPS) • DC to DC Converters • Pulse Transformer Driver • Class D Switching Amplifiers General Description The IXDD404 is comprised of two 4 Amp CMOS high speed MOSFET drivers. Each output can source and sink 4 A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETS & IGBT's. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shootthrough is virtually eliminated in the IXDD404. Improved speed and drive capabilities are further enhanced by very low, matched rise and fall times. Additionally, each driver in the IXDD404 incorporates a unique ability to disable the output under fault conditions. When a logical low is forced into the Enable input of a driver, both of it's final output stage MOSFETs (NMOS and PMOS) are turned off. As a result, the respective output of the IXDD404 enters a tristate mode and achieves a Soft Turn-Off of the MOSFET/ IGBT when a short circuit is detected. This helps prevent damage that could occur to the MOSFET/IGBT if it were to be switched off abruptly due to a dv/dt over-voltage transient. The IXDD404 is available in the standard 8 pin P-DIP (PI), SOIC-8 (SIA) and SOIC-16 (SIA-16) packages. For enhanced thermal performance, the SOP-8 and SOP-16 are also available with an exposed grounded metal back package as the SI and SI-16 respectively. Ordering Information Part Number Package Type Temp. Range IXDD404PI 8-Pin PDIP IXDD404SI IXDD404SIA IXDD404SI-16 8-Pin SOIC with Grounded Metal Back 8-Pin SOIC 16-Pin SOIC with Grounded Metal Back -55°C to +125°C IXDD404SIA-16 16-Pin SOIC NOTE: Mounting or solder tabs on all packages are connected to ground Configuration Dual Non Inverting With Enable Figure 1 - Functional Diagram Vcc ENA 200k OUTA INB ENB GND Copyright © IXYS CORPORATION 2004 200k OUTB First Release DS99046D(11/10) IXDD404 Absolute Maximum Ratings (Note 1) Parameter Value Supply Voltage 40 V All Other Pins -0.3 V to VCC + 0.3 V Junction Temperature Storage Temperature Lead Temperature (10 sec) 150 oC -65 oC to 150 oC 300 oC Electrical Characteristics Operating Ratings Param eter Value Operating Temperature Range -55 oC to 125 oC Thermal Impedance (Junction to Ambient) 8 Pin PDIP (PI) (θJA) 120 oC/W 8 Pin SOIC (SIA) (θJA) 110 oC/W 8 Pin SOIC (SI) (θJA) with heat sink** Heat sink area of 1cm2 71 oC/W 16 Pin SOIC (SIA-16) (θJA) 110 oC/W **Heat sink area is 1 oz. copper on one side of .06" thick FR4 soldered to metal back plane. Unless otherwise noted, TA = 25 oC, 4.5V ≤ VCC ≤ 35V . All voltage measurements with respect to GND. IXDD404 configured as described in Test Conditions. All specifications are for one channel. Symbol Parameter Test Conditions Min Typ Max Units VIH High input voltage 4.5V ≤ VIN ≤ 18V VIL Low input voltage 4.5V ≤ VIN ≤ 18V VIN Input voltage range IIN Input current 0V ≤ VIN ≤ VCC 2.5 V 0.8 V -5 VCC + 0.3 V -10 10 µA VOH VOL ROH ROL IPEAK High output voltage Low output voltage Output resistance @ Output high Output resistance @ Output Low Peak output current VCC = 18V VCC = 18V VCC = 18V VCC - 0.025 2 1.5 4 0.025 2.5 2 V V Ω Ω A IDC VEN VENH Continuous output current Enable voltage range High En Input Voltage - 0.3 2/3 Vcc 1 Vcc + 0.3 A V V VENL tR tF tONDLY tOFFDLY tENOH tDOLD VCC ICC REN Low En Input Voltage Rise time Fall time On-time propagation delay Off-time propagation delay Enable to output high delay time Disable to output low Disable delay time Power supply voltage Power supply current Enable Pull-up Resistor CL=1800pF Vcc=18V CL=1800pF Vcc=18V CL=1800pF Vcc=18V CL=1800pF Vcc=18V VIN = 3.5V VIN = 0V VIN = + VCC 1/3 Vcc V 16 18 ns 13 17 ns 36 40 ns 35 39 ns 30 ns 30 ns 4.5 18 35 V 1 3 mA 0 10 µA 10 µA 200 kΩ Specifications to change without notice Note 1: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for ext.


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