IXBT10N170

www.DataSheet4U.com High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat) = 3.8 V Preliminary Data Sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load TC = 25°C Maximum Ratings 1700 1700 ±20 ±30 20 10 40 ICM = 20 V CES = 1350 140 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A V W °C °C °C °C °C TO-268 (IXBT) G E (TAB) TO-247 AD (IXBH) G C (TAB) C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features z z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268 1.13/10Nm/lb.in. 6 4 g g z z z High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low conduction losses High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 0.10 3.0 - 0.24 TJ = 25°C TJ = 125°C V %/K 5.0 V %/K 10 100 ±100 TJ = 125°C 3.4 4.1 3.8 µA µA nA V V Applications z z z BVCES VGE(th) ICES IGES VCE(sat) IC = 250 µA, VGE = 0 V Temperature Coefficent IC = 250 µA, VCE = VGE Tempe...