IXBH16N170A

Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 16 A = 6.0 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 33 W non repetitive TC = 25°C Maximum Ratings 1700 1700 ±20 ±30 16 10 40 ICM = VCES = 40 1350 10 150 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A V ms W °C °C °C °C °C g g TO-268 (IXBT) G E TO-247 AD (IXBH) G C (TAB) C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features Monolithic fast reverse diode High Blocking Voltage JEDEC TO-268 surface mount and JEDEC TO-247 AD packages Low switching losses High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 2.5 TJ = 125°C V V mA mA nA V V Applications AC motor speed control Uninterruptible power supplies (UPS) ...