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ISL9R8120S3S Dataheets PDF



Part Number ISL9R8120S3S
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 8A 1200V Stealth Diode
Datasheet ISL9R8120S3S DatasheetISL9R8120S3S Datasheet (PDF)

ISL9R8120P2 / ISL9R8120S3S May 2002 ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth™ Diode General Description The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applicati.

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ISL9R8120P2 / ISL9R8120S3S May 2002 ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth™ Diode General Description The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49413. Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 5.5 • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 32ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V • Avalanche Energy Rated Applications • Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD • Snubber Diode Package JEDEC TO-220AC ANODE CATHODE Symbol JEDEC TO-263AB K CATHODE (FLANGE) N/C A ANODE CATHODE (BOTTOM SIDE METAL) Device Maximum Ratings TC = 25°C unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 105oC) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 Ratings 1200 1200 1200 8 16 100 71 20 -55 to 150 300 260 Units V V V A A A W mJ °C °C °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2002 Fairchild Semiconductor Corporation ISL9R8120P2 / ISL9R8120S3S Rev. A ISL9R8120P2 / ISL9R8120S3S Package Marking and Ordering Information Device Marking R8120P2 R8120S3S Device ISL9R8120P2 ISL9R8120S3S Package TO-220AC TO-263AB Tape Width N/A 24mm Quantity 50 800 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current VR = 1200V TC = 25°C TC = 125°C 100 1.0 µA mA On State Characteristics VF Instantaneous Forward Voltage IF = 8A TC = 25°C TC = 125°C 2.8 2.7 3.3 3.1 V V Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A 30 pF Switching Characteristics trr trr IRM(REC) QRR trr S IRM(REC) QRR trr S IRM(REC) QRR dIM/dt Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Maximum di/dt during tb IF = 1A, dIF/dt = 100A/µs, VR = 30V IF = 8A, dIF/dt = 100A/µs, VR = 30V IF = 8A, dIF/dt = 200A/µs, VR = 780V, TC = 25°C IF = 8A, dIF/dt = 200A/µs, VR = 780V, TC = 125°C IF = 8A, dIF/dt = 1000A/µs, VR = 780V, TC = 125°C 25 35 300 4.3 525 375 9 5.5 1.1 200 5.5 11 1.2 310 32 44 ns ns ns A nC ns A µC ns A µC A/µs Thermal Characteristics Rθ JC Rθ JA Thermal Resistance Junction to Case TO-220, TO-263 1.75 62 °C/W °C/W Thermal Resistance Junction to Ambient TO-220, TO-263 ©2002 Fairchild Semiconductor Corporation ISL9R8120P2 / ISL9R8120S3S Rev. A ISL9R8120P2 / ISL9R8120S3S Typical Performance Curves 20 18 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 16 14 12 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25oC 125oC 150oC 100 125oC 10 100oC 75oC 1 1000 150oC 0.1 25oC 0.01 200 300 400 500 600 700 800 900 1000 1100 1200 VF, FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 500 450 400 t, RECOVERY TIMES (ns) VR = 780V, TC = 125oC tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs Figure 2. Reverse Current vs Reverse Voltage 500 450 400 t, RECOVERY TIMES (ns) 350 300 250 200 150 100 tb AT IF = 16A, 8A, 4A VR = 780V, TC = 125oC 350 300 250 200 150 100 50 0 0 2 4 10 6 8 12 IF, FORWARD CURRENT (A) 14 16 ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs 50 0 200 ta AT IF = 16A, 8A, 4A 300 400 500 600 700 800 900 1000 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 3. ta .


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