Document
ISL9R8120P2 / ISL9R8120S3S
May 2002
ISL9R8120P2 / ISL9R8120S3S
8A, 1200V Stealth™ Diode
General Description
The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49413.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 5.5 • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 32ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V • Avalanche Energy Rated
Applications
• Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD • Snubber Diode
Package
JEDEC TO-220AC
ANODE CATHODE
Symbol
JEDEC TO-263AB
K CATHODE (FLANGE) N/C A ANODE
CATHODE (BOTTOM SIDE METAL)
Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 105oC) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 Ratings 1200 1200 1200 8 16 100 71 20 -55 to 150 300 260 Units V V V A A A W mJ °C °C °C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation ISL9R8120P2 / ISL9R8120S3S Rev. A
ISL9R8120P2 / ISL9R8120S3S
Package Marking and Ordering Information
Device Marking R8120P2 R8120S3S Device ISL9R8120P2 ISL9R8120S3S Package TO-220AC TO-263AB Tape Width N/A 24mm Quantity 50 800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
IR Instantaneous Reverse Current VR = 1200V TC = 25°C TC = 125°C 100 1.0 µA mA
On State Characteristics
VF Instantaneous Forward Voltage IF = 8A TC = 25°C TC = 125°C 2.8 2.7 3.3 3.1 V V
Dynamic Characteristics
CJ Junction Capacitance VR = 10V, IF = 0A 30 pF
Switching Characteristics
trr trr IRM(REC) QRR trr S IRM(REC) QRR trr S IRM(REC) QRR dIM/dt Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Maximum di/dt during tb IF = 1A, dIF/dt = 100A/µs, VR = 30V IF = 8A, dIF/dt = 100A/µs, VR = 30V IF = 8A, dIF/dt = 200A/µs, VR = 780V, TC = 25°C IF = 8A, dIF/dt = 200A/µs, VR = 780V, TC = 125°C IF = 8A, dIF/dt = 1000A/µs, VR = 780V, TC = 125°C 25 35 300 4.3 525 375 9 5.5 1.1 200 5.5 11 1.2 310 32 44 ns ns ns A nC ns A µC ns A µC A/µs
Thermal Characteristics
Rθ JC Rθ JA Thermal Resistance Junction to Case TO-220, TO-263 1.75 62 °C/W °C/W Thermal Resistance Junction to Ambient TO-220, TO-263
©2002 Fairchild Semiconductor Corporation
ISL9R8120P2 / ISL9R8120S3S Rev. A
ISL9R8120P2 / ISL9R8120S3S
Typical Performance Curves
20 18 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 16 14 12 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25oC 125oC 150oC 100 125oC 10 100oC 75oC 1 1000 150oC
0.1
25oC
0.01 200
300
400
500
600
700
800
900 1000 1100 1200
VF, FORWARD VOLTAGE (V)
VR , REVERSE VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
500 450 400 t, RECOVERY TIMES (ns) VR = 780V, TC = 125oC tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
Figure 2. Reverse Current vs Reverse Voltage
500 450 400 t, RECOVERY TIMES (ns) 350 300 250 200 150 100 tb AT IF = 16A, 8A, 4A VR = 780V, TC = 125oC
350 300 250 200 150 100 50 0 0 2 4 10 6 8 12 IF, FORWARD CURRENT (A) 14 16 ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
50 0 200
ta AT IF = 16A, 8A, 4A
300
400
500
600
700
800
900
1000
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 3. ta .