ISL9N7030BLP3

ISL9N7030BLP3, ISL9N7030BLS3ST Data Sheet January2002 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET® Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. PWM Optimized Features Fast Switching rDS(ON) = 0.0064Ω (Typ), VGS = 10V rDS(ON) = 0.010Ω (Typ), VGS = 4.5V Qg Total 24nC (Typ), VGS = 5V Qgd (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11nC CISS (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2600pF Packaging ISL9N7030BLS3ST JEDEC TO-263AB DRAIN (FLANGE) ISL9N7030BLP3 JEDEC TO-220AB SOURCE DRAIN GATE Symbol D G GATE SOURCE DRAIN (FLANGE) S Ordering Information PART NUMBER ISL9N7030BLP3 ISL9N7030BLS3ST PACKAGE TO-220AB TO-263AB (Tape and Reel) BRAND 7030BL 7030BL Absolute Maximum Ratings SYMBOL VDSS VDGR VGS ID ID ID IDM PD TJ, TSTG TL Tpkg RθJC RθJA RθJA NOTE: 1. TJ = 25oC to 150oC. TC = 25oC, Unless Otherwise Specified PARAMETER ISL9N7030BLP3, ISL9N7030BLS3ST 30 30 ±20 75 48 15 Figure 4 100 0.67 -55 to 175 300 260 1.5 62 43 UNITS V V V A A A A W W/oC oC oC oC oC/W oC/W oC/W Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20kΩ) (Note 1) Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Figure 2) Continuous (TC = 100...