ISL9N308AD3ST

ISL9N308AD3 / ISL9N308AD3ST June 2002 PWM Optimized ISL9N308AD3 / ISL9N308AD3ST N-Channel Logic Level UltraFET® Trench Power MOSFETs 30V, 50A, 8mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features Fast switching rDS(ON) = 0.0064Ω (Typ), VGS = 10V rDS(ON) = 0.010Ω (Typ), VGS = 4.5V Qg (Typ) = 24nC, VGS = 5V Qgd (Typ) = 8nC CISS (Typ) = 2600pF Applications DC/DC converters D G G D S D-PAK TO-252 (TO-252) I-PAK (TO-251AA) G D S S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Note 1 ID Continuous (TC = 100oC, VGS = 4.5V) Note 1 Continuous (TC = 25oC, VGS = 10V, RθJC = 52oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 50 48 14 Figure 4 100 0.67 -55 to 175 A A A A W W/oC o Ratings 30 ±20 Units V V C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 2 1.5 100 52 oC/W o o C/W C/W Package Marking and Ordering Information Device Marking N308AD N308AD Device ISL9N3...